Heat transport in bulk/nanoporous/bulk silicon devices

M. Criado-Sancho; D. Jou

doi:https://doi.org/10.1016/j.physleta.2012.12.015

Heat transport in bulk/nanoporous/bulk silicon devices

M. Criado-Sancho, D. Jou

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

8 Citations (Scopus)

Abstract

We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. © 2012 Elsevier B.V.

Original language	English
Pages (from-to)	486-490
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	377
DOIs	https://doi.org/10.1016/j.physleta.2012.12.015
Publication status	Published - 4 Feb 2013

Keywords

Heat rectification
Phonon hydrodynamics
Phononics
Porous Si

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Cite this

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title = "Heat transport in bulk/nanoporous/bulk silicon devices",

abstract = "We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. {\textcopyright} 2012 Elsevier B.V.",

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AU - Criado-Sancho, M.

AU - Jou, D.

PY - 2013/2/4

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N2 - We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. © 2012 Elsevier B.V.

AB - We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. © 2012 Elsevier B.V.

KW - Heat rectification

KW - Phonon hydrodynamics

KW - Phononics

KW - Porous Si

U2 - https://doi.org/10.1016/j.physleta.2012.12.015

DO - https://doi.org/10.1016/j.physleta.2012.12.015

M3 - Article

VL - 377

SP - 486

EP - 490

ER -

Heat transport in bulk/nanoporous/bulk silicon devices

Abstract

Keywords

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