© 2017 Elsevier B.V. We evaluate the rectification coefficient of the heat flux in graded SicGe1−cfor longitudinal and radial heat flows, and for different stoichiometric spatial distributions c(z), either in the full stoichiometric range c∈[0,1], and in the ranges with steepest variation of heat conductivity with composition, namely c∈[0,0.1] and c∈[0.9,1]. It turns out that rectification is more efficient in the mentioned ranges than in the full stoichiometric range. In the cylindrical case, the inhomogeneity in the length of internal and external perimeters of the system (geometrical inhomogeneity) is combined with the material inhomogeneity of the concentration profile, in contrast to the rectilinear situation, and influences the rectification coefficient, enhancing or reducing it, depending on the situation.
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 1 Jun 2017|
- Graded material
- Heat rectification
- Si/Ge alloys
Carlomagno, I., Cimmelli, V. A., & Jou, D. (2017). Heat flux rectification in graded Si<inf>c</inf>Ge<inf>1−c</inf>: Longitudinal and radial heat flows. Physica E: Low-Dimensional Systems and Nanostructures, 90, 149-157. https://doi.org/10.1016/j.physe.2017.03.012