This paper reports the results of a systematic study of the influence of deposition conditions on the morphology of films grown using a tetramethylsilane Si(CH3)4 precursor in a hot-wall, low pressure, chemical vapor deposition system at the temperature range 900-1150 °C. Most of the SiC films were deposited on a thin a-SiO2 layer, thermally grown on Si(001) wafers. Characterization of the SiC films was performed by X-ray diffraction, scanning and transmission electron microscopy, ellipsometry, profilometry, electron microprobe analysis with a wavelength dispersive spectrometry detection system, and X-ray photoelectron spectroscopy. The results obtained on the kinetics of growth concern the change in the growth rate and the evolution of the preferential  orientation of the polycrystalline films with the deposition conditions. The general characteristics of the polycrystalline films are their columnar structure, which is related with the very strong  preferred orientation, and the formation of microtwins, having the twin planes perpendicular to the direction of growth. © 1997 Elsevier Science S.A.
- Metal-organic precursors
- Microtwins development