Growth of SiC films obtained by LPCVD

M. T. Clavaguera-Mora, J. Rodríguez-Viejo, Z. El Felk, E. Hurtós, S. Berberich, J. Stoemenos, N. Clavaguera

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25 Citations (Scopus)


This paper reports the results of a systematic study of the influence of deposition conditions on the morphology of films grown using a tetramethylsilane Si(CH3)4 precursor in a hot-wall, low pressure, chemical vapor deposition system at the temperature range 900-1150 °C. Most of the SiC films were deposited on a thin a-SiO2 layer, thermally grown on Si(001) wafers. Characterization of the SiC films was performed by X-ray diffraction, scanning and transmission electron microscopy, ellipsometry, profilometry, electron microprobe analysis with a wavelength dispersive spectrometry detection system, and X-ray photoelectron spectroscopy. The results obtained on the kinetics of growth concern the change in the growth rate and the evolution of the preferential [111] orientation of the polycrystalline films with the deposition conditions. The general characteristics of the polycrystalline films are their columnar structure, which is related with the very strong [111] preferred orientation, and the formation of microtwins, having the twin planes perpendicular to the direction of growth. © 1997 Elsevier Science S.A.
Original languageEnglish
Pages (from-to)1306-1310
JournalDiamond and Related Materials
Publication statusPublished - 1 Jan 1997


  • Metal-organic precursors
  • Microtwins development
  • Poly-SiC

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