By means of a Rapid Thermal Chemical Vapor Deposition (RTCVD) reactor, we have deposited Si nuclei on SiO2 with appropriate characteristics for the fabrication of quantum dot based memories. These characteristics have been obtained from AFM measurements. The effects of temperature and deposition time on nuclei density, size and uniformity have been analyzed and discussed.
|Publication status||Published - 1 Jan 1999|
Vizoso, J., Martín, F., Martínez, X., Garriga, M., & Aymerich, X. (1999). Growth of Si nuclei on SiO<inf>2</inf> for quantum dot memory applications. Microelectronic Engineering, 48, 431-434. https://doi.org/10.1016/S0167-9317(99)00420-7