Growth of Si nuclei on SiO<inf>2</inf> for quantum dot memory applications

J. Vizoso, F. Martín, X. Martínez, M. Garriga, X. Aymerich

    Research output: Contribution to journalArticleResearchpeer-review

    9 Citations (Scopus)

    Abstract

    By means of a Rapid Thermal Chemical Vapor Deposition (RTCVD) reactor, we have deposited Si nuclei on SiO2 with appropriate characteristics for the fabrication of quantum dot based memories. These characteristics have been obtained from AFM measurements. The effects of temperature and deposition time on nuclei density, size and uniformity have been analyzed and discussed.
    Original languageEnglish
    Pages (from-to)431-434
    JournalMicroelectronic Engineering
    Volume48
    DOIs
    Publication statusPublished - 1 Jan 1999

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