Growth morphology of low-pressure metal-organic chemical vapor deposition Silicon Carbide on a -SiO2/Si (100) substrates

J. Rodríguez, N. Clavaguera, M.T. Clavaguera Mora, G. Arnaud, J.J. Pascual, S. Berbrich, J. Millán

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	1-1
Journal	Materials Science and Technology
Issue number	11
Publication status	Published - 1 Jan 1995

Cite this

@article{a1fbd3f37844435abab2f7d9f58368a7,

title = "Growth morphology of low-pressure metal-organic chemical vapor deposition Silicon Carbide on a -SiO2/Si (100) substrates",

author = "J. Rodr{\'i}guez and N. Clavaguera and {Clavaguera Mora}, M.T. and G. Arnaud and J.J. Pascual and S. Berbrich and J. Mill{\'a}n",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "1--1",

number = "11",

}