Growth kinetics, composition, and morphology of Co3O4 thin films prepared by pulsed liquid-injection MOCVD

Mónica Burriel*, Gemma Garcia, Josep Santiso, Adulfas Abrutis, Zita Saltyte, Albert Figueras

*Corresponding author for this work

Research output: Contribution to journalArticleResearchpeer-review

64 Citations (Scopus)

Abstract

Cobalt oxide films were grown by pulsed liquid injection MOCVD using Co(thd)2 dissolved in monoglyme as the precursor. The structure, morphology, and growth rate of the layers deposited on silicon substrates were studied as a function of solution concentration, deposition temperature, and oxygen partial pressure. X-ray diffraction (XRD) of films deposited from 350°C to 540°C showed a pure Co3O4 spinel structure and no CoO was detected, even at the lowest oxygen pressure. X-ray photoelectron spectroscopy (XPS) was used to study the surface composition and oxidation states. Surprisingly, XPS spectra recorded for most of the films seemed to correspond to CoO. This unexpected oxidation state on the surface was assigned to the effect of the high density of edges and corners present in the surface morphology.

Original languageEnglish
Pages (from-to)106-111
Number of pages6
JournalChemical Vapor Deposition
Volume11
Issue number2
DOIs
Publication statusPublished - Feb 2005

Keywords

  • Cobalt oxides
  • Liquid-injection MOCVD
  • Thin films

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