Growth and characterization of nitrogen-doped TiO<inf>2</inf> thin films prepared by reactive pulsed laser deposition

G. Sauthier, F. J. Ferrer, A. Figueras, E. György

    Research output: Contribution to journalArticleResearchpeer-review

    15 Citations (Scopus)

    Abstract

    Nitrogen-doped titanium dioxide (TiO2) thin films were grown on (001) SiO2 substrates by reactive pulsed laser deposition. A KrF* excimer laser source (λ = 248 nm, τFWHM ≅ 10 ns, ν = 10 Hz) was used for the irradiations of pressed powder targets composed by both anatase and rutile phase TiO2. The experiments were performed in a controlled reactive atmosphere consisting of oxygen or mixtures of oxygen and nitrogen gases. The obtained thin film crystal structure was investigated by X-ray diffraction, while their chemical composition as well as chemical bonding states between the elements were studied by X-ray photoelectron spectroscopy. An interrelation was found between nitrogen concentration, crystalline structure, bonding states between the elements, and the formation of titanium oxinitride compounds. Moreover, as a result of the nitrogen incorporation in the films a continuous red-shift of the optical absorption edge accompanied by absorption in the visible spectral range between 400 and 500 nm wavelength was observed. © 2010 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)1464-1469
    JournalThin Solid Films
    Volume519
    Issue number4
    DOIs
    Publication statusPublished - 1 Dec 2010

    Keywords

    • Doped oxides
    • Thin film pulsed laser deposition
    • Titanium oxide
    • X-ray diffraction
    • X-ray photoelectron spectroscopy

    Fingerprint

    Dive into the research topics of 'Growth and characterization of nitrogen-doped TiO<inf>2</inf> thin films prepared by reactive pulsed laser deposition'. Together they form a unique fingerprint.

    Cite this