Growth and characterization of LPCVD SiC grown on SiO2Si(100) substrates

Growth and characterization of LPCVD SiC grown on SiO₂Si(100) substrates

J. Rodriguez, N. Clavaguera, M.T. Clavaguera, G. Arnaud, J. Camassel, J. Pascual, S. Berberich, J. Millan

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Pages (from-to)	98-98
Journal	Materials Science and Technology
Volume	12
Issue number	0
Publication status	Published - 1 Jan 1996

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title = "Growth and characterization of LPCVD SiC grown on SiO2Si(100) substrates",

author = "J. Rodriguez and N. Clavaguera and M.T. Clavaguera and G. Arnaud and J. Camassel and J. Pascual and S. Berberich and J. Millan",

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T1 - Growth and characterization of LPCVD SiC grown on SiO2Si(100) substrates

AU - Rodriguez, J.

AU - Clavaguera, N.

AU - Clavaguera, M.T.

AU - Arnaud, G.

AU - Camassel, J.

AU - Pascual, J.

AU - Berberich, S.

AU - Millan, J.

PY - 1996/1/1

Y1 - 1996/1/1

M3 - Article

SN - 0267-0836

VL - 12

SP - 98

EP - 98

JO - Materials Science and Technology

JF - Materials Science and Technology

IS - 0

ER -