Growth and characterisation of SiC films deposited on a-SiO<inf>2</inf>/Si (100) substrates

J. Rodríguez-Viejo, N. Clavaguera, Z. El Felk, M. T. Clavaguera-Mora, G. Arnaud, J. Camassel, J. Pascual, S. Berberich, J. Millán

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Abstract

The growth of polycrystalline SiC films has been carried out by low pressure chemical vapour deposition in a horizontal quartz reaction chamber using tetramethylsilane and H2 as the precursor gas mixture. Silicon (100) wafers were used as substrates. A thin SiO2 amorphous layer of ∼6 nm was formed before SiC deposition to reduce the strain induced by the 8% difference in thermal expansion coefficients between SiC and Si. Samples were analysed by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and infrared reflectivity. The structure of films grown at temperatures between 950 and 1150°C varies from amorphous to polycrystalline SiC. Preferential [111] orientation and columnar growth of polycrystalline films develops with increasing temperature. © 1996 The Institute of Materials.
Original languageEnglish
Pages (from-to)98-101
JournalMaterials Science and Technology
Volume12
Issue number1
Publication statusPublished - 1 Jan 1996

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