The growth of polycrystalline SiC films has been carried out by low pressure chemical vapour deposition in a horizontal quartz reaction chamber using tetramethylsilane and H2 as the precursor gas mixture. Silicon (100) wafers were used as substrates. A thin SiO2 amorphous layer of ∼6 nm was formed before SiC deposition to reduce the strain induced by the 8% difference in thermal expansion coefficients between SiC and Si. Samples were analysed by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and infrared reflectivity. The structure of films grown at temperatures between 950 and 1150°C varies from amorphous to polycrystalline SiC. Preferential  orientation and columnar growth of polycrystalline films develops with increasing temperature. © 1996 The Institute of Materials.
|Journal||Materials Science and Technology|
|Publication status||Published - 1 Jan 1996|