Grain boundaries as preferential sites for resistive switching in the HfO <inf>2</inf> resistive random access memory structures

M. Lanza, K. Zhang, M. Porti, M. Nafria, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, G. Bersuker

Research output: Contribution to journal › Article › Research › peer-review

188 Citations (Scopus)

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