Gate voltage influence on the channel hot-carrier degradation of high-κ-Based Devices

Esteve Amat, Thomas Kauerauf, Robin Degraeve, Rosana Rodríguez, Montserrat Nafria, Xavier Aymerich, Guido Groeseneken

Research output: Contribution to journalArticleResearchpeer-review

9 Citations (Scopus)

Abstract

In ultrascaled complimentary metaloxidesemiconductor technologies, the lucky-electron model does not describe correctly Channel Hot-Carrier (CHC) degradation for typical transistor test conditions independently of the gate dielectric. A new model to describe the CHC degradation behavior in n-channel metaloxide field-effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented. This new model can be applicable to long- and short-channel transistors with high-κ or as a dielectric. © 2006 IEEE.
Original languageEnglish
Article number5638616
Pages (from-to)92-97
JournalIEEE Transactions on Device and Materials Reliability
Volume11
Issue number1
DOIs
Publication statusPublished - 1 Mar 2011

Keywords

  • High-κ
  • hot carriers
  • reliability

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