Gate voltage influence on the channel hot-carrier degradation of high-κ-Based Devices

Esteve Amat; Thomas Kauerauf; Robin Degraeve; Rosana Rodríguez; Montserrat Nafria; Xavier Aymerich; Guido Groeseneken

doi:10.1109/TDMR.2010.2093138

Gate voltage influence on the channel hot-carrier degradation of high-κ-Based Devices

Esteve Amat, Thomas Kauerauf, Robin Degraeve, Rosana Rodríguez, Montserrat Nafria, Xavier Aymerich, Guido Groeseneken

Research output: Contribution to journal › Article › Research › peer-review

14 Citations (Scopus)

Abstract

In ultrascaled complimentary metaloxidesemiconductor technologies, the lucky-electron model does not describe correctly Channel Hot-Carrier (CHC) degradation for typical transistor test conditions independently of the gate dielectric. A new model to describe the CHC degradation behavior in n-channel metaloxide field-effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented. This new model can be applicable to long- and short-channel transistors with high-κ or as a dielectric. © 2006 IEEE.

Original language	English
Article number	5638616
Pages (from-to)	92-97
Journal	IEEE Transactions on Device and Materials Reliability
Volume	11
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2010.2093138
Publication status	Published - 1 Mar 2011

Keywords

High-κ
hot carriers
reliability

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10.1109/TDMR.2010.2093138

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title = "Gate voltage influence on the channel hot-carrier degradation of high-κ-Based Devices",

abstract = "In ultrascaled complimentary metaloxidesemiconductor technologies, the lucky-electron model does not describe correctly Channel Hot-Carrier (CHC) degradation for typical transistor test conditions independently of the gate dielectric. A new model to describe the CHC degradation behavior in n-channel metaloxide field-effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented. This new model can be applicable to long- and short-channel transistors with high-κ or as a dielectric. {\textcopyright} 2006 IEEE.",

keywords = "High-κ, hot carriers, reliability",

author = "Esteve Amat and Thomas Kauerauf and Robin Degraeve and Rosana Rodr{\'i}guez and Montserrat Nafria and Xavier Aymerich and Guido Groeseneken",

year = "2011",

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doi = "10.1109/TDMR.2010.2093138",

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T1 - Gate voltage influence on the channel hot-carrier degradation of high-κ-Based Devices

AU - Amat, Esteve

AU - Kauerauf, Thomas

AU - Degraeve, Robin

AU - Rodríguez, Rosana

AU - Nafria, Montserrat

AU - Aymerich, Xavier

AU - Groeseneken, Guido

PY - 2011/3/1

Y1 - 2011/3/1

N2 - In ultrascaled complimentary metaloxidesemiconductor technologies, the lucky-electron model does not describe correctly Channel Hot-Carrier (CHC) degradation for typical transistor test conditions independently of the gate dielectric. A new model to describe the CHC degradation behavior in n-channel metaloxide field-effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented. This new model can be applicable to long- and short-channel transistors with high-κ or as a dielectric. © 2006 IEEE.

AB - In ultrascaled complimentary metaloxidesemiconductor technologies, the lucky-electron model does not describe correctly Channel Hot-Carrier (CHC) degradation for typical transistor test conditions independently of the gate dielectric. A new model to describe the CHC degradation behavior in n-channel metaloxide field-effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented. This new model can be applicable to long- and short-channel transistors with high-κ or as a dielectric. © 2006 IEEE.

KW - High-κ

KW - hot carriers

KW - reliability

U2 - 10.1109/TDMR.2010.2093138

DO - 10.1109/TDMR.2010.2093138

M3 - Article

SN - 1530-4388

VL - 11

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EP - 97

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 1

M1 - 5638616

ER -

Gate voltage influence on the channel hot-carrier degradation of high-κ-Based Devices

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Keywords

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