In ultrascaled complimentary metaloxidesemiconductor technologies, the lucky-electron model does not describe correctly Channel Hot-Carrier (CHC) degradation for typical transistor test conditions independently of the gate dielectric. A new model to describe the CHC degradation behavior in n-channel metaloxide field-effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented. This new model can be applicable to long- and short-channel transistors with high-κ or as a dielectric. © 2006 IEEE.
|Journal||IEEE Transactions on Device and Materials Reliability|
|Publication status||Published - 1 Mar 2011|
- hot carriers