Gate-tunable atomically thin lateral MoS<inf>2</inf> Schottky junction patterned by electron beam

Keyphrases

• Electron Beam 100%
• Gate-tunable 100%
• Atomically Thin 100%
• Molybdenite 100%
• Schottky Junction 100%
• Schottky Barrier 66%
• Semiconductors 33%
• Two Dimensional Materials 33%
• Field-effect Transistors 33%
• Barrier Height 33%
• Transport Measurements 33%
• Direct Band Gap 33%
• Schottky 33%
• Cointegration 33%
• Device Fingerprinting 33%
• Electron Beam Irradiation 33%
• Metallic Phase 33%
• Two Dimensional Devices 33%
• Molybdenum Disulfide MoS2 33%
• Top-down Fabrication 33%
• Irradiation Technique 33%

Material Science

• Schottky Barrier 100%
• Field Effect Transistors 50%
• Two-Dimensional Material 50%
• Molybdenum 50%
• Electron Beam Irradiation 50%