Gate-tunable atomically thin lateral MoS<inf>2</inf> Schottky junction patterned by electron beam

Y. Katagiri, T. Nakamura, A. Ishii, C. Ohata, M. Hasegawa, S. Katsumoto, T. Cusati, A. Fortunelli, G. Iannaccone, G. Fiori, S. Roche, J. Haruyama

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