Gate-tunable atomically thin lateral MoS<inf>2</inf> Schottky junction patterned by electron beam

Y. Katagiri; T. Nakamura; A. Ishii; C. Ohata; M. Hasegawa; S. Katsumoto; T. Cusati; A. Fortunelli; G. Iannaccone; G. Fiori; S. Roche; J. Haruyama

doi:https://doi.org/10.1021/acs.nanolett.6b01186

Gate-tunable atomically thin lateral MoS<inf>2</inf> Schottky junction patterned by electron beam

Y. Katagiri, T. Nakamura, A. Ishii, C. Ohata, M. Hasegawa, S. Katsumoto, T. Cusati, A. Fortunelli, G. Iannaccone, G. Fiori, S. Roche, J. Haruyama

Research output: Contribution to journal › Article › Research › peer-review

65 Citations (Scopus)

Abstract

© 2016 American Chemical Society. Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

Original language	English
Pages (from-to)	3788-3794
Journal	Nano Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1021/acs.nanolett.6b01186
Publication status	Published - 8 Jun 2016

Keywords

1T phase
Atomically thin layers
Schottky junction
electron-beam irradiation
semiconductor-metal transition

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https://doi.org/10.1021/acs.nanolett.6b01186

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Cite this

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title = "Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam",

abstract = "{\textcopyright} 2016 American Chemical Society. Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.",

keywords = "1T phase, Atomically thin layers, Schottky junction, electron-beam irradiation, semiconductor-metal transition",

author = "Y. Katagiri and T. Nakamura and A. Ishii and C. Ohata and M. Hasegawa and S. Katsumoto and T. Cusati and A. Fortunelli and G. Iannaccone and G. Fiori and S. Roche and J. Haruyama",

year = "2016",

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doi = "https://doi.org/10.1021/acs.nanolett.6b01186",

language = "English",

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publisher = "American Chemical Society",

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Gate-tunable atomically thin lateral MoS<inf>2</inf> Schottky junction patterned by electron beam. / Katagiri, Y.; Nakamura, T.; Ishii, A.; Ohata, C.; Hasegawa, M.; Katsumoto, S.; Cusati, T.; Fortunelli, A.; Iannaccone, G.; Fiori, G.; Roche, S.; Haruyama, J.

In: Nano Letters, Vol. 16, No. 6, 08.06.2016, p. 3788-3794.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam

AU - Katagiri, Y.

AU - Nakamura, T.

AU - Ishii, A.

AU - Ohata, C.

AU - Hasegawa, M.

AU - Katsumoto, S.

AU - Cusati, T.

AU - Fortunelli, A.

AU - Iannaccone, G.

AU - Fiori, G.

AU - Roche, S.

AU - Haruyama, J.

PY - 2016/6/8

Y1 - 2016/6/8

N2 - © 2016 American Chemical Society. Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

AB - © 2016 American Chemical Society. Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

KW - 1T phase

KW - Atomically thin layers

KW - Schottky junction

KW - electron-beam irradiation

KW - semiconductor-metal transition

U2 - https://doi.org/10.1021/acs.nanolett.6b01186

DO - https://doi.org/10.1021/acs.nanolett.6b01186

M3 - Article

VL - 16

SP - 3788

EP - 3794

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 6

ER -

Gate-tunable atomically thin lateral MoS<inf>2</inf> Schottky junction patterned by electron beam

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Keywords

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