TY - JOUR
T1 - Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam
AU - Katagiri, Y.
AU - Nakamura, T.
AU - Ishii, A.
AU - Ohata, C.
AU - Hasegawa, M.
AU - Katsumoto, S.
AU - Cusati, T.
AU - Fortunelli, A.
AU - Iannaccone, G.
AU - Fiori, G.
AU - Roche, S.
AU - Haruyama, J.
PY - 2016/6/8
Y1 - 2016/6/8
N2 - © 2016 American Chemical Society. Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.
AB - © 2016 American Chemical Society. Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.
KW - 1T phase
KW - Atomically thin layers
KW - electron-beam irradiation
KW - Schottky junction
KW - semiconductor-metal transition
U2 - 10.1021/acs.nanolett.6b01186
DO - 10.1021/acs.nanolett.6b01186
M3 - Article
VL - 16
SP - 3788
EP - 3794
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 6
ER -