Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures

J. Suñé, I. Placencia, E. Farrés, N. Barniol, F. Martin, X. Aymerich

Research output: Contribution to journalArticleResearchpeer-review

2 Citations (Scopus)

Abstract

Experimental breakdown data of different MOS structures under different wearout tests support the validity of a new physical approach to the breakdown statistics. This model is based on the idea that the dielectric breakdown is intimately related to the previous degradation of the SiO2 network, and particularly, to the generation of neutral electron trapping sites. The main properties of the widely used extreme-value statistical distributions are preserved, and the parameters involved have a natural physical interpretation. Only two parameters have been used to build up the model and to fit the experimental: data the minimum area that has to be degraded for the breakdown to be effective, and the critical number of traps that has to be locally generated to trigger the breakdown. Although the analytical calculations have provided excellent results, the Monte Carlo method has been shown to be powerful technique to introduce second-order effects in the sudy of the breakdown statistics. © 1989.
Original languageEnglish
Pages (from-to)27-39
JournalMicroelectronics Journal
Volume20
DOIs
Publication statusPublished - 1 Jan 1989

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