Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontsere, M. Perez-Tomas, J. Placidi, N. Llobet, S. Baron, Y. Chenot, J. C. Cordier, V. Moreno, M. Iglesias, A. Porti, M. Bayerl, M. Lanza, empty Nafria

Research output: Contribution to journalArticleResearchpeer-review

17 Citations (Web of Science)
Original languageEnglish
Pages (from-to)093505-
JournalApplied physics letters
Volume101
DOIs
Publication statusPublished - 1 Jan 2012

Cite this