Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontsere; M. Perez-Tomas; J. Placidi; N. Llobet; S. Baron; Y. Chenot; J. C. Cordier; V. Moreno; M. Iglesias; A. Porti; M. Bayerl; M. Lanza; empty Nafria

doi:https://doi.org/10.1063/1.4748115

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontsere, M. Perez-Tomas, J. Placidi, N. Llobet, S. Baron, Y. Chenot, J. C. Cordier, V. Moreno, M. Iglesias, A. Porti, M. Bayerl, M. Lanza, empty Nafria

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

16 Citations (Web of Science)

Original language	English
Pages (from-to)	093505-
Journal	Applied physics letters
Volume	101
DOIs	https://doi.org/10.1063/1.4748115
Publication status	Published - 1 Jan 2012

Access to Document

https://doi.org/10.1063/1.4748115

https://ddd.uab.cat/record/117260

Cite this

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title = "Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale",

author = "A. Fontsere and M. Perez-Tomas and J. Placidi and N. Llobet and S. Baron and Y. Chenot and Cordier, {J. C.} and V. Moreno and M. Iglesias and A. Porti and M. Bayerl and M. Lanza and empty Nafria",

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AU - Fontsere, A.

AU - Perez-Tomas, M.

AU - Placidi, J.

AU - Llobet, N.

AU - Baron, S.

AU - Chenot, Y.

AU - Cordier, J. C.

AU - Moreno, V.

AU - Iglesias, M.

AU - Porti, A.

AU - Bayerl, M.

AU - Lanza, M.

AU - Nafria, empty

PY - 2012/1/1

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U2 - https://doi.org/10.1063/1.4748115

DO - https://doi.org/10.1063/1.4748115

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SN - 0003-6951

VL - 101

SP - 093505-

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -