Function-fit model for the soft breakdown failure mode

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Abstract

An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.
Original languageEnglish
Pages (from-to)265-267
JournalIEEE Electron Device Letters
Volume20
DOIs
Publication statusPublished - 1 Jun 1999

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