Abstract
An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.
Original language | English |
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Pages (from-to) | 265-267 |
Journal | IEEE Electron Device Letters |
Volume | 20 |
DOIs | |
Publication status | Published - 1 Jun 1999 |