Function-fit model for the soft breakdown failure mode

Enrique Miranda; Jordi Suñé; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich

doi:https://doi.org/10.1109/55.767093

Function-fit model for the soft breakdown failure mode

Enrique Miranda, Jordi Suñé, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich

Research output: Contribution to journal › Article › Research › peer-review

83 Citations (Scopus)

Abstract

An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

Original language	English
Pages (from-to)	265-267
Journal	IEEE Electron Device Letters
Volume	20
DOIs	https://doi.org/10.1109/55.767093
Publication status	Published - 1 Jun 1999

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title = "Function-fit model for the soft breakdown failure mode",

abstract = "An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.",

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AU - Rodríguez, Rosana

AU - Nafría, Montserrat

AU - Aymerich, Xavier

PY - 1999/6/1

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AB - An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

U2 - https://doi.org/10.1109/55.767093

DO - https://doi.org/10.1109/55.767093

M3 - Article

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EP - 267

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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