Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks

A. Rodriguez-Fernandez, J. Suñé, E. Miranda, M. B. González, F. Campabadal

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Abstract

© 2016 American Vacuum Society. A simple function-fit model is proposed for the rate of conducting filament generation in Al2O3/HfO2-based multilayer stacks subjected to a constant voltage stress. During degradation, the devices exhibit stepwise current-time (I-t) characteristics that can be straightforwardly linked to the triggering of multiple breakdown events. The stochastic nature of this stepwise behavior is phenomenologically modeled by means of a nonhomogeneous Poisson process for the arrival rate of the individual failure events. In this work, it is shown that a power-law model for the failure rate in combination with an equivalent circuit representation of the device under stress accounts for the evolution of the I-t curve, providing a first-order estimation of the stress time required to reach a targeted leakage current level. The roles played by the device area and stress voltage on the breakdown dynamics are also investigated.
Original languageEnglish
Article number01A108
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume35
Issue number1
DOIs
Publication statusPublished - 1 Jan 2017

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    Rodriguez-Fernandez, A., Suñé, J., Miranda, E., González, M. B., & Campabadal, F. (2017). Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 35(1), [01A108]. https://doi.org/10.1116/1.4972873