Fully CMOS integrated low voltage 100 MHz MEMS resonator

A. Uranga; J. Teva; J. Verd; J. L. López; F. Torres; J. Esteve; G. Abadal; F. Pérez-Murano; N. Barniol

doi:10.1049/el:20053473

Fully CMOS integrated low voltage 100 MHz MEMS resonator

A. Uranga, J. Teva, J. Verd, J. L. López, F. Torres, J. Esteve, G. Abadal, F. Pérez-Murano, N. Barniol

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

16 Citations (Scopus)

Abstract

The development of a novel fully integrated microelectromechanical system (MEMS) for RF purposes is presented. It is composed of a paddle polysilicon micro-resonator electrostatically excited and a capacitive CMOS read-out amplifier. The micro-resonator is fabricated directly on a commercial CMOS technology, only requiring a wet etching process for the release of the resonant structure after the full CMOS integration. Electrical characterisation of the on-chip resonant device has been performed showing a resonance frequency near 100 MHz.

Original language	English
Pages (from-to)	1327-1328
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	24
DOIs	https://doi.org/10.1049/el:20053473
Publication status	Published - 24 Nov 2005

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AU - Uranga, A.

AU - Teva, J.

AU - Verd, J.

AU - López, J. L.

AU - Torres, F.

AU - Esteve, J.

AU - Abadal, G.

AU - Pérez-Murano, F.

AU - Barniol, N.

PY - 2005/11/24

Y1 - 2005/11/24

N2 - The development of a novel fully integrated microelectromechanical system (MEMS) for RF purposes is presented. It is composed of a paddle polysilicon micro-resonator electrostatically excited and a capacitive CMOS read-out amplifier. The micro-resonator is fabricated directly on a commercial CMOS technology, only requiring a wet etching process for the release of the resonant structure after the full CMOS integration. Electrical characterisation of the on-chip resonant device has been performed showing a resonance frequency near 100 MHz.

AB - The development of a novel fully integrated microelectromechanical system (MEMS) for RF purposes is presented. It is composed of a paddle polysilicon micro-resonator electrostatically excited and a capacitive CMOS read-out amplifier. The micro-resonator is fabricated directly on a commercial CMOS technology, only requiring a wet etching process for the release of the resonant structure after the full CMOS integration. Electrical characterisation of the on-chip resonant device has been performed showing a resonance frequency near 100 MHz.

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DO - 10.1049/el:20053473

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JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Fully CMOS integrated low voltage 100 MHz MEMS resonator

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