Full wafer size investigation of N\super+ and P\super+ co-implanted in 4H-SiC

S. Blanqué, J. Lyonnet, R. Pérez, D' altri, Jordi Pascual Gainza

Research output: Contribution to journal › Article › Research

1 Citation (Scopus)

Original language	English
Pages (from-to)	698-704
Journal	Phys. status solidi, A Appl. mater. sci. (Print)
Volume	202
Issue number	4
DOIs	https://doi.org/10.1002/pssa.200460476
Publication status	Published - 1 Mar 2005

Access to Document

@article{83c2b4f9f7a74269b4f5862a4e7d699c,

title = "Full wafer size investigation of N\super+ and P\super+ co-implanted in 4H-SiC",

author = "S. Blanqu{\'e} and J. Lyonnet and R. P{\'e}rez and D' altri and {Pascual Gainza}, Jordi",

year = "2005",

month = mar,

day = "1",

doi = "10.1002/pssa.200460476",

language = "English",

volume = "202",

pages = "698--704",

number = "4",

}