Full wafer size investigation of N\super+ and P\super+ co-implanted in 4H-SiC

S. Blanqué, J. Lyonnet, R. Pérez, D' altri, Jordi Pascual Gainza

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Original language	English
Pages (from-to)	698-704
Journal	Phys. status solidi, A Appl. mater. sci. (Print)
Volume	202
Issue number	4
DOIs	https://doi.org/10.1002/pssa.200460476
Publication status	Published - 1 Mar 2005

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title = "Full wafer size investigation of N\super+ and P\super+ co-implanted in 4H-SiC",

author = "S. Blanqu{\'e} and J. Lyonnet and R. P{\'e}rez and D' altri and {Pascual Gainza}, Jordi",

year = "2005",

month = mar,

day = "1",

doi = "10.1002/pssa.200460476",

language = "English",

volume = "202",

pages = "698--704",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

number = "4",

}

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T1 - Full wafer size investigation of N\super+ and P\super+ co-implanted in 4H-SiC

AU - Blanqué, S.

AU - Lyonnet, J.

AU - Pérez, R.

AU - altri, D'

AU - Pascual Gainza, Jordi

PY - 2005/3/1

Y1 - 2005/3/1

U2 - 10.1002/pssa.200460476

DO - 10.1002/pssa.200460476

M3 - Article

VL - 202

SP - 698

EP - 704

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 4

ER -