Formation and characterization of filamentary current paths in HFO <inf>2</inf>-based resistive switching structures

F. Palumbo, E. Miranda, G. Ghibaudo, V. Jousseaume

Research output: Contribution to journalArticleResearchpeer-review

15 Citations (Scopus)

Abstract

In this letter, the progressive nature of the forming process step in HfO 2-based resistive switching structures is investigated. Contrary to what happens with ramped or pulsed voltage stresses, current-driven degradation experiments shed light on the formation dynamics of the filamentary path across the oxide layer. The resulting voltage-current characteristics are interpreted in terms of electron transport through a mesoscopic constriction with adiabatic shape. The voltage decrease during the forming process is ascribed to a relaxation of the electron wavefunction confinement effect. The role of the compliance level on the leakage current magnitude is also discussed within this framework. © 2012 IEEE.
Original languageEnglish
Article number6194991
Pages (from-to)1057-1059
JournalIEEE Electron Device Letters
Volume33
Issue number7
DOIs
Publication statusPublished - 10 May 2012

Keywords

  • Dielectric breakdown
  • resistive switching (RS)

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