First principles studies of n and p dopant interactions in SiC: implications for co-doping

R. Rurali, E. Hernández, P. Godignon, J. Rebollo, P. Ordejón

    Research output: Contribution to journalArticleResearch

    2 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)649-652
    JournalMaterials Science Forum
    Volume433-436
    Publication statusPublished - 1 Jan 2003

    Cite this

    Rurali, R., Hernández, E., Godignon, P., Rebollo, J., & Ordejón, P. (2003). First principles studies of n and p dopant interactions in SiC: implications for co-doping. Materials Science Forum, 433-436, 649-652.