FinFET and MOSFET preliminary comparison of gate oxide reliability

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken

Research output: Contribution to journalArticleResearchpeer-review

10 Citations (Scopus)

Abstract

In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET. © 2006.
Original languageEnglish
Pages (from-to)1608-1611
JournalMicroelectronics Reliability
Volume46
DOIs
Publication statusPublished - 1 Sep 2006

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