Fermi-level oscillation in n-type δ-doped Si: A self-consistent tight-binding approach

X. Cartoixà, Y. C. Chang

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Abstract

We have used the empirical tight-binding method within the antibonding orbital model to compute the self-consistent potential profile and Fermi level position in n-type δ-doped Si. This model describes the six valleys in the Si conduction band adequately. We include exchange-correlation effects under the local density approximation. The comparison of our results to empirical pseudopotential calculations shows very good agreement, while effective mass approximation calculations agree only in the low doping regime. At ultra high densities, an oscillatory behavior of the Fermi-level position as a function of the doping concentration is predicted. © 2005 The American Physical Society.
Original languageEnglish
Article number125330
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
DOIs
Publication statusPublished - 15 Sep 2005

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    Cartoixà, X., & Chang, Y. C. (2005). Fermi-level oscillation in n-type δ-doped Si: A self-consistent tight-binding approach. Physical Review B - Condensed Matter and Materials Physics, 72, [125330]. https://doi.org/10.1103/PhysRevB.72.125330