In this paper we present a different approach using a focused ion beam (FIB) as lithographic tool to define nanometric width gaps, which are then transferred to a silicon substrate by reactive ion etching (RIE). This process has been developed to fit the technological requirements for micro- and nano-electromechanicals systems (M-NEMS) applications. © 2007 Elsevier B.V. All rights reserved.
|Publication status||Published - 1 May 2007|
- Focused ion beam