TY - JOUR
T1 - Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors
T2 - Programming based on an external capacitor discharge
AU - Jimenez-Molinos, F.
AU - Garcia, H.
AU - Gonzalez, M. B.
AU - Duenas, S.
AU - Castan, H.
AU - Miranda, E.
AU - Campabadal, F.
AU - Roldan, J. B.
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/9
Y1 - 2021/6/9
N2 - Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.
AB - Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.
KW - capacitor
KW - memristor
KW - resistive-switching device
KW - set/reset processes
UR - http://www.scopus.com/inward/record.url?scp=85114416977&partnerID=8YFLogxK
U2 - 10.1109/CDE52135.2021.9455756
DO - 10.1109/CDE52135.2021.9455756
M3 - Article
AN - SCOPUS:85114416977
SP - 74
EP - 77
JO - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
JF - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
ER -