© 2018 Elsevier B.V. This paper presents the results on the design, fabrication and characterization of a cantilever-type NEM relay featuring a hammer-shaped tip and built in the back end of a conventional 0.35 μm CMOS technology. A high on/off current ratio (higher than 107), a subthreshold swing of only 285 μV/dec, and zero off-state leakage current were experimentally observed. Through an endurance test of 3·103 switching cycles, the relay showed a stable pull-in voltage of 31.25 V with an absolute variation of only 0.5 V. The resonant frequency was also characterized, and observed at 456.97 kHz. Finally, the paper discusses the usability of the presented device as a mass sensor with mass-stiffness decoupling capability for on-chip detection. This innovative feature, which could benefit the application portfolio of the emerging IoT era, lies on the fact that both pull-in voltage and resonant frequency can be fully electrically determined.
|Publication status||Published - 15 May 2018|
- Mass-stiffness sensing
- NEMS relay
- NEMS resonators