TY - JOUR
T1 - Fabrication and characterization of a hammer-shaped CMOS/BEOL-embedded nanoelectromechanical (NEM) relay
AU - Riverola, M.
AU - Uranga, A.
AU - Torres, F.
AU - Barniol, N.
N1 - Funding Information:
This work was supported by the Spanish Government and the European Union FEDER Program through the Project CMOS-MENUTS under Grant TEC2015-66337-R .
Publisher Copyright:
© 2018 Elsevier B.V.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/5/15
Y1 - 2018/5/15
N2 - This paper presents the results on the design, fabrication and characterization of a cantilever-type NEM relay featuring a hammer-shaped tip and built in the back end of a conventional 0.35 μm CMOS technology. A high on/off current ratio (higher than 107), a subthreshold swing of only 285 μV/dec, and zero off-state leakage current were experimentally observed. Through an endurance test of 3·103 switching cycles, the relay showed a stable pull-in voltage of 31.25 V with an absolute variation of only 0.5 V. The resonant frequency was also characterized, and observed at 456.97 kHz. Finally, the paper discusses the usability of the presented device as a mass sensor with mass-stiffness decoupling capability for on-chip detection. This innovative feature, which could benefit the application portfolio of the emerging IoT era, lies on the fact that both pull-in voltage and resonant frequency can be fully electrically determined.
AB - This paper presents the results on the design, fabrication and characterization of a cantilever-type NEM relay featuring a hammer-shaped tip and built in the back end of a conventional 0.35 μm CMOS technology. A high on/off current ratio (higher than 107), a subthreshold swing of only 285 μV/dec, and zero off-state leakage current were experimentally observed. Through an endurance test of 3·103 switching cycles, the relay showed a stable pull-in voltage of 31.25 V with an absolute variation of only 0.5 V. The resonant frequency was also characterized, and observed at 456.97 kHz. Finally, the paper discusses the usability of the presented device as a mass sensor with mass-stiffness decoupling capability for on-chip detection. This innovative feature, which could benefit the application portfolio of the emerging IoT era, lies on the fact that both pull-in voltage and resonant frequency can be fully electrically determined.
KW - CMOS-NEMS
KW - Mass-stiffness sensing
KW - NEMS relay
KW - NEMS resonators
UR - http://www.scopus.com/inward/record.url?scp=85041930875&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2018.01.029
DO - 10.1016/j.mee.2018.01.029
M3 - Article
SN - 0167-9317
VL - 192
SP - 44
EP - 51
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -