Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98).

E. Miranda; J. Suñé; R. Rodríguez; M. Nafría; F. Martín; Japan Society of Applied Physics

Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98).

E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, F. Martín, Japan Society of Applied Physics (Editor)

Department of Electronic Engineering

Research output: Book/Report › Proceeding › Research

Original language	Undefined/Unknown
Place of Publication	Hiroshima (JP)
Number of pages	2
Publication status	Published - Jun 1998

Cite this

Miranda, E., Suñé, J., Rodríguez, R., Nafría, M., Martín, F., & Physics, J. S. O. A. (Ed.) (1998). Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98).

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title = "Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98).{"}Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers{"}: 1998 International Conference od Solid State Devices and Materials (SSDM'98).",

author = "E. Miranda and J. Su{\~n}{\'e} and R. Rodr{\'i}guez and M. Nafr{\'i}a and F. Mart{\'i}n",

editor = "Physics, {Japan Society of Applied}",

year = "1998",

month = jun,

language = "Indefinido/desconocido",

}

Miranda, E, Suñé, J , Rodríguez, R , Nafría, M , Martín, F & Physics, JSOA (ed.) 1998, Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98). Hiroshima (JP).

Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98). / Miranda, E.; Suñé, J.; Rodríguez, R. et al.
Hiroshima (JP), 1998. 2 p.

Research output: Book/Report › Proceeding › Research

TY - BOOK

T1 - Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers"

T2 - 1998 International Conference od Solid State Devices and Materials (SSDM'98).

AU - Miranda, E.

AU - Suñé, J.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Martín, F.

A2 - Physics, Japan Society of Applied

PY - 1998/6

Y1 - 1998/6

M3 - Libro de Actas

BT - Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers"

CY - Hiroshima (JP)

ER -

Miranda E, Suñé J , Rodríguez R , Nafría M , Martín F, Physics JSOA, (ed.). Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98). Hiroshima (JP), 1998. 2 p.