Exploring the magnetically induced field effect in carbon nanotube-based devices

G. Fedorov; A. Tselev; D. Jimenez; S. Latil; N. G. Kalugin; P. Barbara; D. Smirnov; S. Roche

doi:https://doi.org/10.1016/j.physe.2007.08.123

Exploring the magnetically induced field effect in carbon nanotube-based devices

G. Fedorov, A. Tselev, D. Jimenez, S. Latil, N. G. Kalugin, P. Barbara, D. Smirnov, S. Roche

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

We report on the high magnetic field study of transport properties of gated small diameter (quasi)-metallic single wall carbon nanotubes (CNTs). We show that initially metallic CNT devices operate as CNT field-effect transistors under strong magnetic fields. This effect results from the Aharonov-Bohm phenomena at the origin of a band gap opening in metallic nanotubes. Strong exponential magnetoresistance observed up to room temperature is the ultimate consequence of the linear increase of the band gap with a magnetic field. Finally, we show that intrinsic characteristics of a quasi-metallic CNT, such as the helical symmetry, as well as the parameters of the Schottky barriers formed at the contacts, can be deduced from temperature-dependent magnetoconductance measurements. © 2007 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1010-1013
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
DOIs	https://doi.org/10.1016/j.physe.2007.08.123
Publication status	Published - 1 Mar 2008

Keywords

Aharonov-Bohm effect
Carbon nanotubes
Electronic transport
Magnetoresistance

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https://doi.org/10.1016/j.physe.2007.08.123

Cite this

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title = "Exploring the magnetically induced field effect in carbon nanotube-based devices",

abstract = "We report on the high magnetic field study of transport properties of gated small diameter (quasi)-metallic single wall carbon nanotubes (CNTs). We show that initially metallic CNT devices operate as CNT field-effect transistors under strong magnetic fields. This effect results from the Aharonov-Bohm phenomena at the origin of a band gap opening in metallic nanotubes. Strong exponential magnetoresistance observed up to room temperature is the ultimate consequence of the linear increase of the band gap with a magnetic field. Finally, we show that intrinsic characteristics of a quasi-metallic CNT, such as the helical symmetry, as well as the parameters of the Schottky barriers formed at the contacts, can be deduced from temperature-dependent magnetoconductance measurements. {\textcopyright} 2007 Elsevier B.V. All rights reserved.",

keywords = "Aharonov-Bohm effect, Carbon nanotubes, Electronic transport, Magnetoresistance",

author = "G. Fedorov and A. Tselev and D. Jimenez and S. Latil and Kalugin, {N. G.} and P. Barbara and D. Smirnov and S. Roche",

year = "2008",

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doi = "https://doi.org/10.1016/j.physe.2007.08.123",

language = "English",

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TY - JOUR

T1 - Exploring the magnetically induced field effect in carbon nanotube-based devices

AU - Fedorov, G.

AU - Tselev, A.

AU - Jimenez, D.

AU - Latil, S.

AU - Kalugin, N. G.

AU - Barbara, P.

AU - Smirnov, D.

AU - Roche, S.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - We report on the high magnetic field study of transport properties of gated small diameter (quasi)-metallic single wall carbon nanotubes (CNTs). We show that initially metallic CNT devices operate as CNT field-effect transistors under strong magnetic fields. This effect results from the Aharonov-Bohm phenomena at the origin of a band gap opening in metallic nanotubes. Strong exponential magnetoresistance observed up to room temperature is the ultimate consequence of the linear increase of the band gap with a magnetic field. Finally, we show that intrinsic characteristics of a quasi-metallic CNT, such as the helical symmetry, as well as the parameters of the Schottky barriers formed at the contacts, can be deduced from temperature-dependent magnetoconductance measurements. © 2007 Elsevier B.V. All rights reserved.

AB - We report on the high magnetic field study of transport properties of gated small diameter (quasi)-metallic single wall carbon nanotubes (CNTs). We show that initially metallic CNT devices operate as CNT field-effect transistors under strong magnetic fields. This effect results from the Aharonov-Bohm phenomena at the origin of a band gap opening in metallic nanotubes. Strong exponential magnetoresistance observed up to room temperature is the ultimate consequence of the linear increase of the band gap with a magnetic field. Finally, we show that intrinsic characteristics of a quasi-metallic CNT, such as the helical symmetry, as well as the parameters of the Schottky barriers formed at the contacts, can be deduced from temperature-dependent magnetoconductance measurements. © 2007 Elsevier B.V. All rights reserved.

KW - Aharonov-Bohm effect

KW - Carbon nanotubes

KW - Electronic transport

KW - Magnetoresistance

U2 - https://doi.org/10.1016/j.physe.2007.08.123

DO - https://doi.org/10.1016/j.physe.2007.08.123

M3 - Article

SN - 1386-9477

VL - 40

SP - 1010

EP - 1013

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

ER -

Exploring the magnetically induced field effect in carbon nanotube-based devices

Abstract

Keywords

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