Exploring the magnetically induced field effect in carbon nanotube-based devices

G. Fedorov, A. Tselev, D. Jimenez, S. Latil, N. G. Kalugin, P. Barbara, D. Smirnov, S. Roche

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

We report on the high magnetic field study of transport properties of gated small diameter (quasi)-metallic single wall carbon nanotubes (CNTs). We show that initially metallic CNT devices operate as CNT field-effect transistors under strong magnetic fields. This effect results from the Aharonov-Bohm phenomena at the origin of a band gap opening in metallic nanotubes. Strong exponential magnetoresistance observed up to room temperature is the ultimate consequence of the linear increase of the band gap with a magnetic field. Finally, we show that intrinsic characteristics of a quasi-metallic CNT, such as the helical symmetry, as well as the parameters of the Schottky barriers formed at the contacts, can be deduced from temperature-dependent magnetoconductance measurements. © 2007 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1010-1013
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
DOIs
Publication statusPublished - 1 Mar 2008

Keywords

  • Aharonov-Bohm effect
  • Carbon nanotubes
  • Electronic transport
  • Magnetoresistance

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