Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties

A. Ruiz, S. Claramunt, A. Crespo-Yepes, M. Porti, M. Nafria, H. Xu, C. Liu, Q. Wu

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Abstract

Two different Kelvin Probe Force Microscopy (KPFM) measurement configurations have been combined to evaluate at the nanoscale the effects of an electrical stress on Organic Thin Film Transistors (OTFTs) properties. As an example, Channel Hot Carrier (CHC) degradation has been induced to provoke some damage in the studied devices. The results show that the use of the two KPFM configurations, together with their nanoscale resolution, provides additional information about the damage in the different regions/materials of the devices, allowing to correlate device level characteristics with the nanoscale material properties.

Original languageEnglish
Article number108061
JournalSOLID-STATE ELECTRONICS
Volume186
Publication statusPublished - 1 Dec 2021

Keywords

  • CHC
  • Device level
  • KPFM
  • NBTI
  • Nanoscale
  • OTFTs

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