Explicit quantum potential and charge model for double-gate MOSFETs

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6 Citations (Scopus)

Abstract

In this paper, we present a compact quantum model for both the electrostatic potential and electric charge in thin-film symmetric double-gate metal-oxide-semiconductor field-effect transistors with undoped body. As a novelty, both the resulting potential and charge have explicit expressions on bias and geometrical parameters. A comparison has been made between self-consistent numerical solutions of Schrödinger-Poisson equations and our model results with close agreement. Finally, the range of validity of the presented model is discussed. © 2010 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)530-535
JournalSolid-State Electronics
Volume54
DOIs
Publication statusPublished - 1 May 2010

Keywords

  • Double-gate MOSFETs
  • Modeling
  • Quantization
  • Volume inversion

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