Explicit model for the gate tunneling current in double-gate MOSFETs

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8 Citations (Scopus)

Abstract

In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal-oxide-semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrödinger-Poisson (SP) equations has been performed to demonstrate the accuracy of the model. © 2011 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)93-97
JournalSolid-State Electronics
Volume68
DOIs
Publication statusPublished - 1 Feb 2012

Keywords

  • Direct tunneling
  • Double-gate MOSFETs
  • Gate tunneling
  • Modeling quantization

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