We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and RF applications where band-gap engineering of graphene could be not needed. The physical framework is a field-effect model and drift-diffusion carrier transport. Explicit closed-form expressions have been derived for the drain current continuously covering all operation regions. The model has been benchmarked with measured prototype devices, demonstrating accuracy and predictive behavior. Finally, we show an example of projection of the intrinsic gain as a figure of merit commonly used in RF/analog applications. © 2011 IEEE.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Nov 2011|
- field-effect transistor (FET)
- radio frequency (RF)