Explicit drain current, charge and capacitance model of graphene field-effect transistors

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Abstract

This paper presents a compact physics-based model of the drain current, charge, and capacitance of graphene field-effect transistors, which is of relevance for the exploration of dc, ac, and transient behavior of graphene-based circuits. The physical framework is a field-effect model and drift-diffusion carrier transport incorporating saturation velocity effects. First, an explicit model has been derived for the drain current. Using it as a basis, explicit closed-form expressions for the charge and capacitances based on the Ward-Dutton partition scheme were derived, covering continuously all the operation regions. The model is of special interest for analog and radio-frequency applications where bandgap engineering of graphene is not needed. © 2011 IEEE.
Original languageEnglish
Article number6054021
Pages (from-to)4377-4383
JournalIEEE Transactions on Electron Devices
Volume58
DOIs
Publication statusPublished - 1 Dec 2011

Keywords

  • Analog
  • field-effect transistor (FET)
  • graphene
  • modeling
  • radio frequency (RF)

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