We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations. © 2005 IEEE.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Aug 2005|
- Charge control model
- Compact device modeling
- Surrounding-gate (SGT) MOSFETs