Explicit continuous model for long-channel undoped surrounding gate MOSFETs

Benjamin Iñíguez; David Jiménez; Jaume Roig; Hamdy A. Hamid; Lluís F. Marsal; Josep Pallarès

doi:10.1109/TED.2005.852892

Explicit continuous model for long-channel undoped surrounding gate MOSFETs

Benjamin Iñíguez, David Jiménez, Jaume Roig, Hamdy A. Hamid, Lluís F. Marsal, Josep Pallarès

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

197 Citations (Scopus)

Abstract

We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations. © 2005 IEEE.

Original language	English
Pages (from-to)	1868-1873
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	8
DOIs	https://doi.org/10.1109/TED.2005.852892
Publication status	Published - 1 Aug 2005

Keywords

Charge control model
Compact device modeling
Surrounding-gate (SGT) MOSFETs

Access to Document

10.1109/TED.2005.852892

Fingerprint Dive into the research topics of 'Explicit continuous model for long-channel undoped surrounding gate MOSFETs'. Together they form a unique fingerprint.

Cite this

@article{b7279a0ce0d544bfbc773f920b936f2c,

title = "Explicit continuous model for long-channel undoped surrounding gate MOSFETs",

abstract = "We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations. {\textcopyright} 2005 IEEE.",

keywords = "Charge control model, Compact device modeling, Surrounding-gate (SGT) MOSFETs",

author = "Benjamin I{\~n}{\'i}guez and David Jim{\'e}nez and Jaume Roig and Hamid, {Hamdy A.} and Marsal, {Llu{\'i}s F.} and Josep Pallar{\`e}s",

year = "2005",

month = aug,

day = "1",

doi = "10.1109/TED.2005.852892",

language = "English",

volume = "52",

pages = "1868--1873",

number = "8",

}

TY - JOUR

T1 - Explicit continuous model for long-channel undoped surrounding gate MOSFETs

AU - Iñíguez, Benjamin

AU - Jiménez, David

AU - Roig, Jaume

AU - Hamid, Hamdy A.

AU - Marsal, Lluís F.

AU - Pallarès, Josep

PY - 2005/8/1

Y1 - 2005/8/1

N2 - We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations. © 2005 IEEE.

AB - We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations. © 2005 IEEE.

KW - Charge control model

KW - Compact device modeling

KW - Surrounding-gate (SGT) MOSFETs

U2 - 10.1109/TED.2005.852892

DO - 10.1109/TED.2005.852892

M3 - Article

VL - 52

SP - 1868

EP - 1873

IS - 8

ER -