Explicit continuous model for long-channel undoped surrounding gate MOSFETs

Benjamin Iñíguez, David Jiménez, Jaume Roig, Hamdy A. Hamid, Lluís F. Marsal, Josep Pallarès

Research output: Contribution to journalArticleResearchpeer-review

207 Citations (Scopus)


We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations. © 2005 IEEE.
Original languageEnglish
Pages (from-to)1868-1873
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 1 Aug 2005


  • Charge control model
  • Compact device modeling
  • Surrounding-gate (SGT) MOSFETs


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