Explicit continuous model for long-channel undoped surrounding gate MOSFETs

Benjamin Iñíguez, David Jiménez, Jaume Roig, Hamdy A. Hamid, Lluís F. Marsal, Josep Pallarès

Research output: Contribution to journalArticleResearchpeer-review

194 Citations (Scopus)

Abstract

We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations. © 2005 IEEE.
Original languageEnglish
Pages (from-to)1868-1873
JournalIEEE Transactions on Electron Devices
Volume52
Issue number8
DOIs
Publication statusPublished - 1 Aug 2005

Keywords

  • Charge control model
  • Compact device modeling
  • Surrounding-gate (SGT) MOSFETs

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