An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses. © 2007 IEEE.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Jul 2007|
- Compact device modeling
- Double-gate (DG) MOSFET
- Intrinsic capacitances