Explicit analytical charge and capacitance models of undoped double-gate MOSFETs

Oana Moldovan; David Jiménez; Jaume Roig Guitart; Ferney A. Chaves; Benjamín Iñiguez

doi:https://doi.org/10.1109/TED.2007.899402

Explicit analytical charge and capacitance models of undoped double-gate MOSFETs

Oana Moldovan, David Jiménez, Jaume Roig Guitart, Ferney A. Chaves, Benjamín Iñiguez

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

69 Citations (Scopus)

Abstract

An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses. © 2007 IEEE.

Original language	English
Pages (from-to)	1718-1724
Journal	IEEE Transactions on Electron Devices
Volume	54
DOIs	https://doi.org/10.1109/TED.2007.899402
Publication status	Published - 1 Jul 2007

Keywords

Compact device modeling
Double-gate (DG) MOSFET
Intrinsic capacitances

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Moldovan, O., Jiménez, D., Guitart, J. R., Chaves, F. A., & Iñiguez, B. (2007). Explicit analytical charge and capacitance models of undoped double-gate MOSFETs. IEEE Transactions on Electron Devices, 54, 1718-1724. https://doi.org/10.1109/TED.2007.899402

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AU - Moldovan, Oana

AU - Jiménez, David

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AU - Chaves, Ferney A.

AU - Iñiguez, Benjamín

PY - 2007/7/1

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AB - An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses. © 2007 IEEE.

KW - Compact device modeling

KW - Double-gate (DG) MOSFET

KW - Intrinsic capacitances

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