Explicit analytical charge and capacitance models of undoped double-gate MOSFETs

Oana Moldovan, David Jiménez, Jaume Roig Guitart, Ferney A. Chaves, Benjamín Iñiguez

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Abstract

An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses. © 2007 IEEE.
Original languageEnglish
Pages (from-to)1718-1724
JournalIEEE Transactions on Electron Devices
Volume54
DOIs
Publication statusPublished - 1 Jul 2007

Keywords

  • Compact device modeling
  • Double-gate (DG) MOSFET
  • Intrinsic capacitances

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    Moldovan, O., Jiménez, D., Guitart, J. R., Chaves, F. A., & Iñiguez, B. (2007). Explicit analytical charge and capacitance models of undoped double-gate MOSFETs. IEEE Transactions on Electron Devices, 54, 1718-1724. https://doi.org/10.1109/TED.2007.899402