Experimental Time Evolution Study of the HfO<inf>2</inf>-Based IMPLY Gate Operation

Marcos Maestro-Izquierdo; Javier Martin-Martinez; Albert Crespo Yepes; Manel Escudero; Rosana Rodriguez; Montserrat Nafria; Xavier Aymerich; Antonio Rubio

doi:10.1109/TED.2017.2778315

Experimental Time Evolution Study of the HfO<inf>2</inf>-Based IMPLY Gate Operation

Marcos Maestro-Izquierdo, Javier Martin-Martinez, Albert Crespo Yepes, Manel Escudero, Rosana Rodriguez, Montserrat Nafria, Xavier Aymerich, Antonio Rubio

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

© 1963-2012 IEEE. In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. In the literature, the IMPLY operation has been widely simulated, but most of the efforts have been just focused on accomplishing its truth table, only considering the initial and final states of the gate. However, a complete understanding of the time evolution between states is still missing and barely reported yet. In this paper, the time evolution of the memristors involved in an IMPLY gate are studied in detail for every case of the gate. Furthermore, the impact on IMPLY gate operation of the internal resistor connected in series with the memristors of the IMPLY gate is included.

Original language	English
Article number	8245876
Pages (from-to)	404-410
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	2
DOIs	https://doi.org/10.1109/TED.2017.2778315
Publication status	Published - 1 Feb 2018

Keywords

Logic
material implication (IMPLY)
memristors
resistive switching (RS)

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10.1109/TED.2017.2778315

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@article{391944eae9ad4edeaca61d483534166d,

title = "Experimental Time Evolution Study of the HfO2-Based IMPLY Gate Operation",

abstract = "{\textcopyright} 1963-2012 IEEE. In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. In the literature, the IMPLY operation has been widely simulated, but most of the efforts have been just focused on accomplishing its truth table, only considering the initial and final states of the gate. However, a complete understanding of the time evolution between states is still missing and barely reported yet. In this paper, the time evolution of the memristors involved in an IMPLY gate are studied in detail for every case of the gate. Furthermore, the impact on IMPLY gate operation of the internal resistor connected in series with the memristors of the IMPLY gate is included.",

keywords = "Logic, material implication (IMPLY), memristors, resistive switching (RS)",

author = "Marcos Maestro-Izquierdo and Javier Martin-Martinez and Yepes, {Albert Crespo} and Manel Escudero and Rosana Rodriguez and Montserrat Nafria and Xavier Aymerich and Antonio Rubio",

year = "2018",

month = feb,

day = "1",

doi = "10.1109/TED.2017.2778315",

language = "English",

volume = "65",

pages = "404--410",

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}

Experimental Time Evolution Study of the HfO<inf>2</inf>-Based IMPLY Gate Operation. / Maestro-Izquierdo, Marcos; Martin-Martinez, Javier; Yepes, Albert Crespo; Escudero, Manel; Rodriguez, Rosana ; Nafria, Montserrat ; Aymerich, Xavier; Rubio, Antonio.

In: IEEE Transactions on Electron Devices, Vol. 65, No. 2, 8245876, 01.02.2018, p. 404-410.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Experimental Time Evolution Study of the HfO2-Based IMPLY Gate Operation

AU - Maestro-Izquierdo, Marcos

AU - Martin-Martinez, Javier

AU - Yepes, Albert Crespo

AU - Escudero, Manel

AU - Rodriguez, Rosana

AU - Nafria, Montserrat

AU - Aymerich, Xavier

AU - Rubio, Antonio

PY - 2018/2/1

Y1 - 2018/2/1

N2 - © 1963-2012 IEEE. In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. In the literature, the IMPLY operation has been widely simulated, but most of the efforts have been just focused on accomplishing its truth table, only considering the initial and final states of the gate. However, a complete understanding of the time evolution between states is still missing and barely reported yet. In this paper, the time evolution of the memristors involved in an IMPLY gate are studied in detail for every case of the gate. Furthermore, the impact on IMPLY gate operation of the internal resistor connected in series with the memristors of the IMPLY gate is included.

AB - © 1963-2012 IEEE. In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. In the literature, the IMPLY operation has been widely simulated, but most of the efforts have been just focused on accomplishing its truth table, only considering the initial and final states of the gate. However, a complete understanding of the time evolution between states is still missing and barely reported yet. In this paper, the time evolution of the memristors involved in an IMPLY gate are studied in detail for every case of the gate. Furthermore, the impact on IMPLY gate operation of the internal resistor connected in series with the memristors of the IMPLY gate is included.

KW - Logic

KW - material implication (IMPLY)

KW - memristors

KW - resistive switching (RS)

U2 - 10.1109/TED.2017.2778315

DO - 10.1109/TED.2017.2778315

M3 - Article

VL - 65

SP - 404

EP - 410

IS - 2

M1 - 8245876

ER -

Experimental Time Evolution Study of the HfO<inf>2</inf>-Based IMPLY Gate Operation

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Keywords

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