Experimental Time Evolution Study of the HfO<inf>2</inf>-Based IMPLY Gate Operation

Marcos Maestro-Izquierdo, Javier Martin-Martinez, Albert Crespo Yepes, Manel Escudero, Rosana Rodriguez, Montserrat Nafria, Xavier Aymerich, Antonio Rubio

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

© 1963-2012 IEEE. In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. In the literature, the IMPLY operation has been widely simulated, but most of the efforts have been just focused on accomplishing its truth table, only considering the initial and final states of the gate. However, a complete understanding of the time evolution between states is still missing and barely reported yet. In this paper, the time evolution of the memristors involved in an IMPLY gate are studied in detail for every case of the gate. Furthermore, the impact on IMPLY gate operation of the internal resistor connected in series with the memristors of the IMPLY gate is included.
Original languageEnglish
Article number8245876
Pages (from-to)404-410
JournalIEEE Transactions on Electron Devices
Volume65
Issue number2
DOIs
Publication statusPublished - 1 Feb 2018

Keywords

  • Logic
  • material implication (IMPLY)
  • memristors
  • resistive switching (RS)

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