Experimental evidence of T<inf>BD</inf> power-law for voltage dependence of oxide breakdown in ultrathin gate oxides

Ernest Y. Wu, A. Vayshenker, E. Nowak, J. Suñé, R. P. Vollertsen, W. Lai, D. Harmon

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    114 Citations (Scopus)

    Abstract

    In this paper, we present experimental evidence on the voltage-dependence of the voltage acceleration factors observed on ultrathin oxides from 5 nm down to ∼ 1 nm over a wide range of voltages from ∼2 V to 6 V. Two independent experimental approaches, area scaling method and long-term stress, are used to investigate this phenomenon. We show the exponential law with a constant voltage-acceleration factor violates the widely accepted fundamental breakdown property of Poisson random statistics while the voltage-dependent voltage acceleration described by an empirical power-law relation preserves this well-known property. The apparent thickness-dependence of voltage acceleration factors measured in different voltage ranges can be nicely understood and unified with these independent experimental results in the scenario of a voltage-driven breakdown. In the framework of the critical defect density and defect generation rate for charge-to-breakdown, we explore the possible explanation of increasing voltage acceleration factors at reduced voltage by assuming a geometric model for the critical defect density.
    Original languageEnglish
    Pages (from-to)2244-2253
    JournalIEEE Transactions on Electron Devices
    Volume49
    Issue number12
    DOIs
    Publication statusPublished - 1 Dec 2002

    Keywords

    • Gate dielectric
    • MOS devices
    • Oxide
    • Reliability
    • Semiconductor device reliability
    • Time-dependent dielectric breakdown (TDDB) measurements

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