A model which accounted for demagnetization effects was used for the calculation of the magnetic properties of semiconductors of orthorhombic shape in the perfect shielding state. The planar linear circuits that lie perpendicular to the direction of the applied field were considered for the calculations. Various equations showed that for a description of the susceptibility, the orthorhombic system was described by only one parameter , γ=c/a+a/b. The results show that for thin materials there is a large average value of current induced, and produces larger demagnetization effects.
|Journal||Journal of Applied Physics|
|Publication status||Published - 1 Jul 2004|