Experimental and Modeling Study of Metal-Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices

Keyphrases

• Memristive Devices 100%
• Electronic Transport 100%
• Single Nanowire 100%
• Metal-insulator Interfaces 100%
• Resistive Switching 66%
• Memristor 66%
• Electrochemical Metallization Memory 66%
• Systems-based 33%
• Material Selection 33%
• Unveiling 33%
• Redox 33%
• Modeling Approach 33%
• Material Properties 33%
• Impurities 33%
• Catalytic Activity 33%
• Selection Criteria 33%
• Electrical Characteristics 33%
• Device Performance 33%
• Conduction Characteristics 33%
• Metal-insulator 33%
• Doping Concentration 33%
• Hysteretic 33%
• Memory Cell 33%
• Electrode Materials 33%
• Single-crystalline 33%
• Counter Electrode 33%
• Interface Chemistry 33%
• Active Electrode 33%
• Crystalline ZnO 33%
• Pt Electrode 33%
• Ag Electrode 33%
• Recent Advancements 33%
• Electrochemically Active 33%
• Contact Configuration 33%
• Von Neumann Architecture 33%
• Computing Paradigm 33%
• Schottky Barrier Height 33%
• ZnO Nanowires 33%
• Nanowire-based Devices 33%
• Inert Electrodes 33%
• Schottky Interface 33%
• Adsorbed Moisture 33%
• Physicochemical Phenomena 33%
• Single Nanowire Devices 33%

Material Science

• Nanowires 100%
• Materials Property 33%
• ZnO 33%
• Schottky Barrier 33%
• Nanowire Based Device 33%
• Catalyst Activity 33%
• Electrical Property 33%