Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies

A. Bernardi, M. I. Alonso, J. S. Reparaz, A. R. Goñi, P. D. Lacharmoise, J. O. Ossó, M. Garriga

    Research output: Contribution to journalArticleResearchpeer-review

    14 Citations (Scopus)

    Abstract

    We follow the growth of islands with different shapes by monitoring the strain relaxation by reflection high energy electron diffraction (RHEED). Comparing a bimodal ensemble of pyramids and domes with a monomodal distribution of C-induced domes, we observe different relaxation pathways and a growth mode change from Stranski-Krastanow to Volmer-Weber. We also study the changes induced by the capping process with Si. Small strains in thin cap layers are revealed by spectroscopic ellipsometry. Raman spectroscopy is employed to probe the built-in strain and silicon intermixing in different types of islands, evidencing that smaller islands are enriched in Si and effectively recompressed, whereas bigger relaxed dots remain substantially unaffected. © IOP Publishing Ltd.
    Original languageEnglish
    Article number475401
    JournalNanotechnology
    Volume18
    Issue number47
    DOIs
    Publication statusPublished - 28 Nov 2007

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