Etch-Stop behaviour of buried layers formed by substoichiometric nitrogen ion implantation into silicon

A. Pérez-Rodríguez, A. Romano-Rodríguez, J.R. Morante, M.C. Acero, J. Esteve, J. Montserrat, A. El-Hassani

    Research output: Contribution to journalArticleResearch

    1579 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1-1
    JournalJ. Electrochem. Soc.
    Volume143
    Publication statusPublished - 1 Feb 1996

    Cite this

    Pérez-Rodríguez, A., Romano-Rodríguez, A., Morante, J. R., Acero, M. C., Esteve, J., Montserrat, J., & El-Hassani, A. (1996). Etch-Stop behaviour of buried layers formed by substoichiometric nitrogen ion implantation into silicon. J. Electrochem. Soc., 143, 1-1.