Equivalent circuit model for the gate leakage current in broken down HfO<inf>2</inf>/TaN/TiN gate stacks

Keyphrases

• TiN Gate 100%
• HfO2 100%
• Gate Stack 100%
• Equivalent Circuit Model 100%
• Post-breakdown 100%
• Gate Leakage Current 100%
• Voltage Range 50%
• Series Resistance 50%
• Diode 50%
• Current-voltage (I-V) Characteristics 50%
• Gate Bias 50%
• Analytical Solution 50%
• NMOSFET 50%
• Breakdown Current 50%
• Lambert W Function 50%
• Shunt Leakage 50%
• Leakage Path 50%

Engineering

• Equivalent Circuit Model 100%
• Gate Stack 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Series Resistance 50%
• Gate Bias 50%
• Current-Voltage Characteristic 50%