Equivalent circuit model for the gate leakage current in broken down HfO<inf>2</inf>/TaN/TiN gate stacks

Enrique Miranda; Kin Leong Pey; Rakesh Ranjan; Chih Hang Tung

doi:10.1109/LED.2008.2006413

Equivalent circuit model for the gate leakage current in broken down HfO<inf>2</inf>/TaN/TiN gate stacks

Enrique Miranda, Kin Leong Pey, Rakesh Ranjan, Chih Hang Tung

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

13 Citations (Scopus)

Abstract

We propose an equivalent circuit model for the post-breakdown (BD) current-voltage (I - V) characteristics in HfO2/TaN/TiN gate stacks in n-MOSFETs. The model consists of two opposite-biased diodes with series resistances and a shunt leakage path. The circuit admits analytical solution using the Lambert W-function and is tested for both negative and positive gate biases in the voltage range of -1.5 to +1.5 V. We also show the versatility of the proposed approach to deal with the post-BD I - V when source and drain contacts are grounded or floating and analyze the obtained results in terms of the charge available for conduction. © 2008 IEEE.

Original language	English
Pages (from-to)	1353-1355
Journal	IEEE Electron Device Letters
Volume	29
DOIs	https://doi.org/10.1109/LED.2008.2006413
Publication status	Published - 8 Dec 2008

Keywords

Dielectric breakdown (BD)
High-κ
MOSFET

Access to Document

10.1109/LED.2008.2006413

Cite this

@article{0eee5740b0f74d0e8987932da48e79f2,

title = "Equivalent circuit model for the gate leakage current in broken down HfO2/TaN/TiN gate stacks",

abstract = "We propose an equivalent circuit model for the post-breakdown (BD) current-voltage (I - V) characteristics in HfO2/TaN/TiN gate stacks in n-MOSFETs. The model consists of two opposite-biased diodes with series resistances and a shunt leakage path. The circuit admits analytical solution using the Lambert W-function and is tested for both negative and positive gate biases in the voltage range of -1.5 to +1.5 V. We also show the versatility of the proposed approach to deal with the post-BD I - V when source and drain contacts are grounded or floating and analyze the obtained results in terms of the charge available for conduction. {\textcopyright} 2008 IEEE.",

keywords = "Dielectric breakdown (BD), High-κ, MOSFET",

author = "Enrique Miranda and Pey, {Kin Leong} and Rakesh Ranjan and Tung, {Chih Hang}",

year = "2008",

month = dec,

day = "8",

doi = "10.1109/LED.2008.2006413",

language = "English",

volume = "29",

pages = "1353--1355",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Equivalent circuit model for the gate leakage current in broken down HfO2/TaN/TiN gate stacks

AU - Miranda, Enrique

AU - Pey, Kin Leong

AU - Ranjan, Rakesh

AU - Tung, Chih Hang

PY - 2008/12/8

Y1 - 2008/12/8

N2 - We propose an equivalent circuit model for the post-breakdown (BD) current-voltage (I - V) characteristics in HfO2/TaN/TiN gate stacks in n-MOSFETs. The model consists of two opposite-biased diodes with series resistances and a shunt leakage path. The circuit admits analytical solution using the Lambert W-function and is tested for both negative and positive gate biases in the voltage range of -1.5 to +1.5 V. We also show the versatility of the proposed approach to deal with the post-BD I - V when source and drain contacts are grounded or floating and analyze the obtained results in terms of the charge available for conduction. © 2008 IEEE.

AB - We propose an equivalent circuit model for the post-breakdown (BD) current-voltage (I - V) characteristics in HfO2/TaN/TiN gate stacks in n-MOSFETs. The model consists of two opposite-biased diodes with series resistances and a shunt leakage path. The circuit admits analytical solution using the Lambert W-function and is tested for both negative and positive gate biases in the voltage range of -1.5 to +1.5 V. We also show the versatility of the proposed approach to deal with the post-BD I - V when source and drain contacts are grounded or floating and analyze the obtained results in terms of the charge available for conduction. © 2008 IEEE.

KW - Dielectric breakdown (BD)

KW - High-κ

KW - MOSFET

U2 - 10.1109/LED.2008.2006413

DO - 10.1109/LED.2008.2006413

M3 - Article

SN - 0741-3106

VL - 29

SP - 1353

EP - 1355

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Equivalent circuit model for the gate leakage current in broken down HfO<inf>2</inf>/TaN/TiN gate stacks

Abstract

Keywords

Access to Document

Fingerprint

Cite this