Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

P. De Coux, R. Bachelet, B. Warot-Fonrose, V. Skumryev, L. Lupina, G. Niu, T. Schroeder, J. Fontcuberta, F. Sánchez

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

© 2014 AIP Publishing LLC. A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.
Original languageEnglish
Article number012401
JournalApplied Physics Letters
Volume105
Issue number1
DOIs
Publication statusPublished - 7 Jul 2014

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