Enhancing total conductivity of La<inf>2</inf>NiO<inf>4+δ</inf> epitaxial thin films by reducing thickness

Mónica Burriel, José Santiso, Marta D. Rossell, Gustaaf Van Tendeloo, Albert Figueras, Gemma Garcia

Research output: Contribution to journalArticleResearchpeer-review

37 Citations (Scopus)

Abstract

High quality epitaxial c axis oriented La2NiO 4+δ thin films have been prepared by the pulsed injection metal organic chemical vapor deposition technique on different substrates. High-resolution electron microscopy/transmission electron microscopy has been used to confirm the high crystalline quality of the deposited films. The c-parameter evolution has been studied by XRD as a function of time and gas atmosphere. The high temperature transport properties along the basal a-b plane of epitaxial La2NiO4+δ films have been measured, and the total conductivity of the layers has been found to increase as the thickness is reduced. Layers of 50 nm and thinner have shown a maximum conductivity larger than that measured for single-crystals, in particular, the 33 nm thick films with a conductivity of 475 S/cm in oxygen correspond to the highest value measured to date for this material. © 2008 American Chemical Society.
Original languageEnglish
Pages (from-to)10982-10987
JournalJournal of Physical Chemistry C
Volume112
Issue number29
DOIs
Publication statusPublished - 24 Jul 2008

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