Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2

M.I. Alonso; M. Garriga; A. Bernardi; A.R. Goñi; A.F. Lopeandia; G. Garcia; J. Rodríguez-Viejo; J.L. Lábár

doi:doi:10.1016/j.tsf.2008.01.003

Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2

M.I. Alonso, M. Garriga, A. Bernardi, A.R. Goñi, A.F. Lopeandia, G. Garcia, J. Rodríguez-Viejo, J.L. Lábár

Department of Physics

Research output: Contribution to journal › Article › Research

10 Citations (Scopus)

Original language	English
Pages (from-to)	4277-4281
Journal	Thin Solid Films
Volume	516
Issue number	12
DOIs	https://doi.org/doi:10.1016/j.tsf.2008.01.003
Publication status	Published - 1 Jan 2008

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doi:10.1016/j.tsf.2008.01.003

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Alonso, M. I., Garriga, M., Bernardi, A., Goñi, A. R., Lopeandia, A. F., Garcia, G., Rodríguez-Viejo, J., & Lábár, J. L. (2008). Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2. Thin Solid Films, 516(12), 4277-4281. https://doi.org/doi:10.1016/j.tsf.2008.01.003

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author = "M.I. Alonso and M. Garriga and A. Bernardi and A.R. Go{\~n}i and A.F. Lopeandia and G. Garcia and J. Rodr{\'i}guez-Viejo and J.L. L{\'a}b{\'a}r",

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AU - Alonso, M.I.

AU - Garriga, M.

AU - Bernardi, A.

AU - Goñi, A.R.

AU - Lopeandia, A.F.

AU - Garcia, G.

AU - Rodríguez-Viejo, J.

AU - Lábár, J.L.

PY - 2008/1/1

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DO - doi:10.1016/j.tsf.2008.01.003

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SP - 4277

EP - 4281

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 12

ER -