Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals

M. I. Alonso; M. Garriga; A. Bernardi; A. R. Goñi; A. F. Lopeandia; G. Garcia; J. Rodríguez-Viejo; J. L. Lábár

doi:https://doi.org/10.1002/pssa.200777851

Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals

M. I. Alonso, M. Garriga, A. Bernardi, A. R. Goñi, A. F. Lopeandia, G. Garcia, J. Rodríguez-Viejo, J. L. Lábár

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

5 Citations (Scopus)

Abstract

We studied the dielectric functions of Ge nanocrystals obtained by crystallization of amorphous Ge thin films embedded in SiO ₂. Partial crystallization of films was induced by thermal annealing. Crystalline regions gave rise to clear spectral features due to interband transitions whose critical point parameters correlated with the initial a-Ge thickness. These changes were clearly attributed to quantum confinement effects. Second derivative of derivative function spectra and their fit showing the blueshift in E ₁, and E ₁ + δ ₁, transitions. Energies obtained in bulk Ge are labeled "B" and given for reference.

Original language	English
Pages (from-to)	888-891
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	205
Issue number	4
DOIs	https://doi.org/10.1002/pssa.200777851 https://doi.org/10.1002/pssa.200777851
Publication status	Published - 1 Apr 2008

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Alonso, M. I., Garriga, M., Bernardi, A., Goñi, A. R., Lopeandia, A. F., Garcia, G., Rodríguez-Viejo, J., & Lábár, J. L. (2008). Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals. Physica Status Solidi (A) Applications and Materials Science, 205(4), 888-891. https://doi.org/10.1002/pssa.200777851, https://doi.org/10.1002/pssa.200777851

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abstract = "We studied the dielectric functions of Ge nanocrystals obtained by crystallization of amorphous Ge thin films embedded in SiO 2. Partial crystallization of films was induced by thermal annealing. Crystalline regions gave rise to clear spectral features due to interband transitions whose critical point parameters correlated with the initial a-Ge thickness. These changes were clearly attributed to quantum confinement effects. Second derivative of derivative function spectra and their fit showing the blueshift in E 1, and E 1 + δ 1, transitions. Energies obtained in bulk Ge are labeled {"}B{"} and given for reference.",

author = "Alonso, {M. I.} and M. Garriga and A. Bernardi and Go{\~n}i, {A. R.} and Lopeandia, {A. F.} and G. Garcia and J. Rodr{\'i}guez-Viejo and L{\'a}b{\'a}r, {J. L.}",

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doi = "https://doi.org/10.1002/pssa.200777851",

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Alonso, MI, Garriga, M, Bernardi, A, Goñi, AR, Lopeandia, AF , Garcia, G , Rodríguez-Viejo, J & Lábár, JL 2008, 'Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals', Physica Status Solidi (A) Applications and Materials Science, vol. 205, no. 4, pp. 888-891. https://doi.org/10.1002/pssa.200777851, https://doi.org/10.1002/pssa.200777851

TY - JOUR

T1 - Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals

AU - Alonso, M. I.

AU - Garriga, M.

AU - Bernardi, A.

AU - Goñi, A. R.

AU - Lopeandia, A. F.

AU - Garcia, G.

AU - Rodríguez-Viejo, J.

AU - Lábár, J. L.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - We studied the dielectric functions of Ge nanocrystals obtained by crystallization of amorphous Ge thin films embedded in SiO 2. Partial crystallization of films was induced by thermal annealing. Crystalline regions gave rise to clear spectral features due to interband transitions whose critical point parameters correlated with the initial a-Ge thickness. These changes were clearly attributed to quantum confinement effects. Second derivative of derivative function spectra and their fit showing the blueshift in E 1, and E 1 + δ 1, transitions. Energies obtained in bulk Ge are labeled "B" and given for reference.

AB - We studied the dielectric functions of Ge nanocrystals obtained by crystallization of amorphous Ge thin films embedded in SiO 2. Partial crystallization of films was induced by thermal annealing. Crystalline regions gave rise to clear spectral features due to interband transitions whose critical point parameters correlated with the initial a-Ge thickness. These changes were clearly attributed to quantum confinement effects. Second derivative of derivative function spectra and their fit showing the blueshift in E 1, and E 1 + δ 1, transitions. Energies obtained in bulk Ge are labeled "B" and given for reference.

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U2 - https://doi.org/10.1002/pssa.200777851

DO - https://doi.org/10.1002/pssa.200777851

M3 - Article

SN - 1862-6300

VL - 205

SP - 888

EP - 891

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 4

ER -

Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals

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