Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals

M. I. Alonso, M. Garriga, A. Bernardi, A. R. Goñi, A. F. Lopeandia, G. Garcia, J. Rodríguez-Viejo, J. L. Lábár

Research output: Contribution to journalArticleResearchpeer-review

5 Citations (Scopus)

Abstract

We studied the dielectric functions of Ge nanocrystals obtained by crystallization of amorphous Ge thin films embedded in SiO 2. Partial crystallization of films was induced by thermal annealing. Crystalline regions gave rise to clear spectral features due to interband transitions whose critical point parameters correlated with the initial a-Ge thickness. These changes were clearly attributed to quantum confinement effects. Second derivative of derivative function spectra and their fit showing the blueshift in E 1, and E 1 + δ 1, transitions. Energies obtained in bulk Ge are labeled "B" and given for reference. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
Original languageEnglish
Pages (from-to)888-891
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
DOIs
Publication statusPublished - 1 Apr 2008

Fingerprint Dive into the research topics of 'Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals'. Together they form a unique fingerprint.

  • Cite this