Electrothermally actuated RF MEMS switches suspended on a low-resistivity substrate

David Girbau, Lluís Pradell, Antonio Lázaro, À;var Nebot

    Research output: Contribution to journalArticleResearchpeer-review

    33 Citations (Scopus)

    Abstract

    This paper presents an electrothermally actuated lateral resistive-contact switch for application to low-gigahertz-band communication systems. It was manufactured on a standard low-resistivity substrate, and its RF performance was improved by suspending the structures 25 μm from the substrate, which is a strategy for future integration with active devices in the system-on-chip concept. Measured insertion losses are -0.26 dB at 1 GHz and -0.65 dB at 6 GHz, return losses are -29 dB at 1 GHz and -25 dB at 6 GHz, and isolations are -52 dB at 1 GHz and -26 dB at 6 GHz. The device is driven by a metal electrothermal actuator, which achieves large displacements and contact forces at much lower temperatures than traditional polysilicon electrothermal actuators. The RF power handling characteristics are also addressed and measured. © 2007 IEEE.
    Original languageEnglish
    Pages (from-to)1061-1070
    JournalJournal of Microelectromechanical Systems
    Volume16
    Issue number5
    DOIs
    Publication statusPublished - 1 Oct 2007

    Keywords

    • Electrothermal actuator
    • Low-resistivity substrate
    • Microelectromechanical systems (MEMS) switch
    • System on chip

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