Electrostatics of two-dimensional lateral junctions

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Abstract

© 2018 IOP Publishing Ltd. The increasing technological control of two-dimensional (2D) materials has allowed the demonstration of 2D lateral junctions exhibiting unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic devices. Notably, the chemically doped MoS2 homojunction, the WSe2-MoS2 monolayer and MoS2 monolayer/multilayer heterojunctions, have been demonstrated. Here we report the investigation of 2D lateral junction electrostatics, which differs from the bulk case because of the weaker screening, producing a much longer transition region between the space-charge region and the quasi-neutral region, making inappropriate the use of the complete-depletion region approximation. For such a purpose we have developed a method based on the conformal mapping technique to solve the 2D electrostatics, widely applicable to every kind of junctions, giving accurate results for even large asymmetric charge distribution scenarios.
Original languageEnglish
Article number275203
JournalNanotechnology
Volume29
Issue number27
DOIs
Publication statusPublished - 8 May 2018

Keywords

  • 2D Poisson equation
  • 2D lateral junctions
  • 2D semiconductors
  • conformal mapping
  • electrostatics
  • modeling
  • pn junctions

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