Electrically enhanced readout system for a high-frequency CMOS-MEMS resonator

Arantxa Uranga, Jaume Verd, Joan Lluis Lopez, Jordi Teva, Francesc Torres, Joan Josep Giner, Gonzalo Murillo, Gabriel Abadal, Nuria Barniol

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)

Abstract

The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 μm CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a 48×108 resonant frequency-quality factor product (Q×fres) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators. © 2009 ETRI.
Original languageEnglish
Pages (from-to)478-480
JournalETRI Journal
Volume31
DOIs
Publication statusPublished - 1 Aug 2009

Keywords

  • CMOS-MEMS
  • Clamped-clamped beam resonator
  • Differential readout amplifier
  • MEMS characterization

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